The InAs/GaSb(001) valence-band offset is calculated for the two inequivalent GaAs-like and InSb-like interfaces and found to coincide to within approximate to 30 meV. This result is rationalized and generalized to arbitrary composition profiles and induced strain by using a simple model, based on the linear response theory, which is validated by a number of accurate first-principles calculations for intermixed interfaces.
InAs/GaSb(001) valence-band offset: Independence of interface composition and strain / B., Montanari; M., Peressi; S., Baroni; Molinari, Elisa. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 69:(1996), pp. 3218-3220.
InAs/GaSb(001) valence-band offset: Independence of interface composition and strain
MOLINARI, Elisa
1996
Abstract
The InAs/GaSb(001) valence-band offset is calculated for the two inequivalent GaAs-like and InSb-like interfaces and found to coincide to within approximate to 30 meV. This result is rationalized and generalized to arbitrary composition profiles and induced strain by using a simple model, based on the linear response theory, which is validated by a number of accurate first-principles calculations for intermixed interfaces.
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