A detailed study of Si-H stretching in porous silicon was performed based on the induction model. Good agreement with experimental infrared absorption spectra was achieved considering the oxygen nearest-neighbors and next nearest-neighbors. Carbon presence in the samples was detected and its influence on Si-H stretching was determined.
Induction-model analysis of Si-H stretching mode in Porous Silicon / A., Borghesi; G., Guizzetti; A., Sassella; Bisi, Olmes; L., Pavesi. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 89:(1994), pp. 615-618.
Induction-model analysis of Si-H stretching mode in Porous Silicon
BISI, Olmes;
1994
Abstract
A detailed study of Si-H stretching in porous silicon was performed based on the induction model. Good agreement with experimental infrared absorption spectra was achieved considering the oxygen nearest-neighbors and next nearest-neighbors. Carbon presence in the samples was detected and its influence on Si-H stretching was determined.
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