We calculate the near-field optical spectra of excitons and biexcitons in semiconductor quantum dots naturally occurring at interface fluctuations in GaAs-based quantum wells, using a nonlocal description of the response function to a spatially modulated electromagnetic field. The relative intensity of the lowest, far-field forbidden excitonic states is predicted; the spatial extension of the ground biexciton state is found, in agreement with recently published experiments.
Optical near-field mapping of excitons and biexcitons in naturally occurring semiconductor quantum dots / U., Hohenester; Goldoni, Guido; Molinari, Elisa. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 84:20(2004), pp. 3963-3965. [10.1063/1.1741033]
Optical near-field mapping of excitons and biexcitons in naturally occurring semiconductor quantum dots
GOLDONI, Guido;MOLINARI, Elisa
2004
Abstract
We calculate the near-field optical spectra of excitons and biexcitons in semiconductor quantum dots naturally occurring at interface fluctuations in GaAs-based quantum wells, using a nonlocal description of the response function to a spatially modulated electromagnetic field. The relative intensity of the lowest, far-field forbidden excitonic states is predicted; the spatial extension of the ground biexciton state is found, in agreement with recently published experiments.
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