We have studied the effect of including the on-site Hubbard electron-electron correlation in the calculation of the quasiparticle spectrum, obtaining the observed semiconducting interface when the Coulombinteraction parameter U is larger than 3 eV. The interface states within the optical band gap can bepresent also at higher coverages when some disorder exists, evidentiating a general mechanism forthe Fermi level pinning at this interface.
Electron electron correlation for Sb on GaAs(110) / Magri, Rita; Manghi, Franca; CALANDRA BUONAURA, Carlo. - STAMPA. - 1:(1994), pp. 572-575. (Intervento presentato al convegno 22nd International Conference on the Physics of Semiconductors: Vancouver, Canada, August 15-19, 1994, tenutosi a Vancouver, Canada nel August 15-19, 1994).
Electron electron correlation for Sb on GaAs(110)
MAGRI, Rita;MANGHI, Franca;CALANDRA BUONAURA, Carlo
1994
Abstract
We have studied the effect of including the on-site Hubbard electron-electron correlation in the calculation of the quasiparticle spectrum, obtaining the observed semiconducting interface when the Coulombinteraction parameter U is larger than 3 eV. The interface states within the optical band gap can bepresent also at higher coverages when some disorder exists, evidentiating a general mechanism forthe Fermi level pinning at this interface.
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