We have studied the effect of including the on-site Hubbard electron-electron correlation in the calculation of the quasiparticle spectrum, obtaining the observed semiconducting interface when the Coulombinteraction parameter U is larger than 3 eV. The interface states within the optical band gap can bepresent also at higher coverages when some disorder exists, evidentiating a general mechanism forthe Fermi level pinning at this interface.

Electron electron correlation for Sb on GaAs(110) / Magri, Rita; Manghi, Franca; CALANDRA BUONAURA, Carlo. - STAMPA. - 1:(1994), pp. 572-575. (Intervento presentato al convegno 22nd International Conference on the Physics of Semiconductors: Vancouver, Canada, August 15-19, 1994, tenutosi a Vancouver, Canada nel August 15-19, 1994).

Electron electron correlation for Sb on GaAs(110)

MAGRI, Rita;MANGHI, Franca;CALANDRA BUONAURA, Carlo
1994

Abstract

We have studied the effect of including the on-site Hubbard electron-electron correlation in the calculation of the quasiparticle spectrum, obtaining the observed semiconducting interface when the Coulombinteraction parameter U is larger than 3 eV. The interface states within the optical band gap can bepresent also at higher coverages when some disorder exists, evidentiating a general mechanism forthe Fermi level pinning at this interface.
1994
22nd International Conference on the Physics of Semiconductors: Vancouver, Canada, August 15-19, 1994,
Vancouver, Canada
August 15-19, 1994
1
572
575
Magri, Rita; Manghi, Franca; CALANDRA BUONAURA, Carlo
Electron electron correlation for Sb on GaAs(110) / Magri, Rita; Manghi, Franca; CALANDRA BUONAURA, Carlo. - STAMPA. - 1:(1994), pp. 572-575. (Intervento presentato al convegno 22nd International Conference on the Physics of Semiconductors: Vancouver, Canada, August 15-19, 1994, tenutosi a Vancouver, Canada nel August 15-19, 1994).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/20602
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