The study of two-dimensional (2D) materials has gained significant attention due to their potential use in electronic, spintronic, and optoelectronics applications. Transition metal dichalcogenides (TMDs)[1], a type of 2D material, are particularly interesting because they have a bandgap that changes from indirect to direct as their thickness decreases from bulk to monolayer[2]. Tungsten disulphide (WS2)[3] is of particular interest due to its direct bandgap in the visible range, making it suitable for electronics and optoelectronics applications. Therefore, it is important to control the growth process to obtain high-quality WS2 with desirable electronic and optical properties using chemical vapor deposition (CVD) growth for mass production of commercial devices.
Ionic liquid gating of CVD-growth WS2-based field effect transistors / Martini, L., Demontis, V., Prete, D., Convertino, D., Pace, S., Paletti, P., Coletti, C., Rossella, F.. - (2023), pp. 243-243. (18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 ita 2023) [10.1109/NMDC57951.2023.10343926].
Ionic liquid gating of CVD-growth WS2-based field effect transistors
Prete D.;Rossella F.
2023
Abstract
The study of two-dimensional (2D) materials has gained significant attention due to their potential use in electronic, spintronic, and optoelectronics applications. Transition metal dichalcogenides (TMDs)[1], a type of 2D material, are particularly interesting because they have a bandgap that changes from indirect to direct as their thickness decreases from bulk to monolayer[2]. Tungsten disulphide (WS2)[3] is of particular interest due to its direct bandgap in the visible range, making it suitable for electronics and optoelectronics applications. Therefore, it is important to control the growth process to obtain high-quality WS2 with desirable electronic and optical properties using chemical vapor deposition (CVD) growth for mass production of commercial devices.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
