Electrical control of material properties is a fundamental tool exploited by scientists and engineers to deploy devices and investigate fundamental phenomena. However, 'conventional' gating techniques based on oxides often limits device performance for many electronic applications[1]. On the other hand, Ion-gating[2], replacing the dielectric with an electrolyte featuring high ionic mobility, offers a new solution to link electronics and ionics, leading to exceptional results in both fundamental theoretical studies of solid-sate physics[3] as well as practical applications. However, Despite the widespread success achieved by this performing technique, some information is still missing regarding the optimal device geometry and architecture to be developed in order to maximize the ionic concentration at the electrolyte/semiconductor interface to provide enhanced device operation.
Impact of counter-electrode and device architecture on the gating performance of iontronic transistors / Liaquat, A., Carella, A., Prete, D., Demontis, V., Martini, L., Menozzi, C., Rossella, F.. - (2023), pp. 785-786. (18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 ita 2023) [10.1109/NMDC57951.2023.10343644].
Impact of counter-electrode and device architecture on the gating performance of iontronic transistors
Liaquat A.;Prete D.;Rossella F.
2023
Abstract
Electrical control of material properties is a fundamental tool exploited by scientists and engineers to deploy devices and investigate fundamental phenomena. However, 'conventional' gating techniques based on oxides often limits device performance for many electronic applications[1]. On the other hand, Ion-gating[2], replacing the dielectric with an electrolyte featuring high ionic mobility, offers a new solution to link electronics and ionics, leading to exceptional results in both fundamental theoretical studies of solid-sate physics[3] as well as practical applications. However, Despite the widespread success achieved by this performing technique, some information is still missing regarding the optimal device geometry and architecture to be developed in order to maximize the ionic concentration at the electrolyte/semiconductor interface to provide enhanced device operation.
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