Methodology and Test Structures for Studying β-Ga2O3 Dielectric and Contact Interfaces

An outline of versatile device structures and test methodologies is provided to streamline the fabrication and characterization of β-Ga2O3 and other novel semiconductor materials for the purpose of investigating gate oxide and metal contact interfaces. β-Ga2O3/Al2O3 metal-oxide-semiconductor capacitors (MOSCAPs) and β-Ga2O3/Ti/Au transfer length method (TLM) structures are fabricated for preliminary investigation of dielectric trapping and contact properties as a function of processing. Multifrequency C-V measurements of MOSCAPs show negligible differences in charge trapping at or near the oxide interface following ultraviolet-ozone (UV-O3) surface pretreatment. Additionally, I-V TLM characterization demonstrates improvements in ohmic contact properties after an O2 plasma surface cleaning prior to metallization.