Transistors realized on the 2D antiferromagnetic semiconductor CrPS4 exhibit large magnetoconductance due to magnetic-field-induced changes in the magnetic state. The microscopic mechanism coupling the conductance and magnetic state is not understood. We identify it by analyzing the evolution of the parameters determining the transistor behavior─carrier mobility and threshold voltage─with temperature and magnetic field. For temperatures T near the Néel temperature TN, the magnetoconductance originates from a mobility increase due to the applied magnetic field that reduces spin fluctuation induced disorder. For T ≪ TN, instead, what changes is the threshold voltage, so that increasing the field at fixed gate voltage increases the density of accumulated electrons. The phenomenon is explained by a conduction band-edge shift correctly predicted by the ab initio calculations. Our results demonstrate that the band structure of CrPS4 depends on its magnetic state and reveal a mechanism for magnetoconductance that had not been identified earlier.

Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS4 Transistors / Wu, F.; Gibertini, M.; Watanabe, K.; Taniguchi, T.; Gutierrez-Lezama, I.; Ubrig, N.; Morpurgo, A. F.. - In: NANO LETTERS. - ISSN 1530-6984. - 23:17(2023), pp. 8140-8145. [10.1021/acs.nanolett.3c02274]

Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS4 Transistors

Gibertini M.;
2023

Abstract

Transistors realized on the 2D antiferromagnetic semiconductor CrPS4 exhibit large magnetoconductance due to magnetic-field-induced changes in the magnetic state. The microscopic mechanism coupling the conductance and magnetic state is not understood. We identify it by analyzing the evolution of the parameters determining the transistor behavior─carrier mobility and threshold voltage─with temperature and magnetic field. For temperatures T near the Néel temperature TN, the magnetoconductance originates from a mobility increase due to the applied magnetic field that reduces spin fluctuation induced disorder. For T ≪ TN, instead, what changes is the threshold voltage, so that increasing the field at fixed gate voltage increases the density of accumulated electrons. The phenomenon is explained by a conduction band-edge shift correctly predicted by the ab initio calculations. Our results demonstrate that the band structure of CrPS4 depends on its magnetic state and reveal a mechanism for magnetoconductance that had not been identified earlier.
2023
23
17
8140
8145
Magnetism-Induced Band-Edge Shift as the Mechanism for Magnetoconductance in CrPS4 Transistors / Wu, F.; Gibertini, M.; Watanabe, K.; Taniguchi, T.; Gutierrez-Lezama, I.; Ubrig, N.; Morpurgo, A. F.. - In: NANO LETTERS. - ISSN 1530-6984. - 23:17(2023), pp. 8140-8145. [10.1021/acs.nanolett.3c02274]
Wu, F.; Gibertini, M.; Watanabe, K.; Taniguchi, T.; Gutierrez-Lezama, I.; Ubrig, N.; Morpurgo, A. F.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1330970
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