The electron–hole bilayer tunnel (EHBTFET)has been proposed as a density of states (DOS) switch capable of achieving a subthreshold slope lower than 60mV/decade at room temperature; however, one of the main challenges is the control of the lateral band-to-band tunneling (BTBT) leakage in the OFF state. In this work, we show that by using oppositely doped underlap regions; the unwanted penetration of the wavefunction into the underlap region at low gate biases is prevented; thereby drastically reducing the lateral BTBT leakage without any penalty on the ON current. The method is verified using a full-quantum 2D Schrödinger–Poisson solver under the effective mass approximation. For a channel thickness of 10 nm, an In0.53Ga0.47As EHBTFET with counterdoping can exhibit an ON-current up to 20 mA mm and an average subthreshold swing (SS) of about 30 mV/dec. Compared to previous lateral leakage suppression solutions, the proposed method can be fabricated using template-assisted selective epitaxy.

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET / Alper, C.; Palestri, Pierpaolo; Padilla, J. L.; Ionescu, A. M.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 1361-6641. - 31:4(2016), pp. 1-6. [10.1088/0268-1242/31/4/045001]

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

PALESTRI, Pierpaolo;
2016

Abstract

The electron–hole bilayer tunnel (EHBTFET)has been proposed as a density of states (DOS) switch capable of achieving a subthreshold slope lower than 60mV/decade at room temperature; however, one of the main challenges is the control of the lateral band-to-band tunneling (BTBT) leakage in the OFF state. In this work, we show that by using oppositely doped underlap regions; the unwanted penetration of the wavefunction into the underlap region at low gate biases is prevented; thereby drastically reducing the lateral BTBT leakage without any penalty on the ON current. The method is verified using a full-quantum 2D Schrödinger–Poisson solver under the effective mass approximation. For a channel thickness of 10 nm, an In0.53Ga0.47As EHBTFET with counterdoping can exhibit an ON-current up to 20 mA mm and an average subthreshold swing (SS) of about 30 mV/dec. Compared to previous lateral leakage suppression solutions, the proposed method can be fabricated using template-assisted selective epitaxy.
2016
31
4
1
6
Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET / Alper, C.; Palestri, Pierpaolo; Padilla, J. L.; Ionescu, A. M.. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 1361-6641. - 31:4(2016), pp. 1-6. [10.1088/0268-1242/31/4/045001]
Alper, C.; Palestri, Pierpaolo; Padilla, J. L.; Ionescu, A. M.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1328116
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