A time-dependent simulation procedure has been implemented in a state of the art Monte-Carlo device simulator that includes quantum corrections, and applied to the evaluation of the RF performance of bulk and ultra-thin-body double-gate (UTB-DG) MOSFETs with L-G = 25 nm. The analysis focuses on the evaluation of the signal delay along the channel and of the admittance matrix at the device terminals. The performance of the bulk and UTB-DG MOSFETs are compared; the latter provides a significantly larger transition frequency (F-T), due to the larger trans-conductance and much lower total drain capacitance, thanks to suppressed junction capacitance.
Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs / Barin, N.; Palestri, Pierpaolo; Fiegna, C.. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 51:4(2007), pp. 604-610. [10.1016/j.sse.2007.02.023]
Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs
PALESTRI, Pierpaolo;
2007
Abstract
A time-dependent simulation procedure has been implemented in a state of the art Monte-Carlo device simulator that includes quantum corrections, and applied to the evaluation of the RF performance of bulk and ultra-thin-body double-gate (UTB-DG) MOSFETs with L-G = 25 nm. The analysis focuses on the evaluation of the signal delay along the channel and of the admittance matrix at the device terminals. The performance of the bulk and UTB-DG MOSFETs are compared; the latter provides a significantly larger transition frequency (F-T), due to the larger trans-conductance and much lower total drain capacitance, thanks to suppressed junction capacitance.File | Dimensione | Formato | |
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