An extensive parameter analysis is performed on the electron-hole bilayer tunnel field-effect transistor (EHBTFET) using a 1-D effective mass Schrödinger-Poisson solver with corrections for band non-parabolicity considering thin InAs, In0.53Ga0.47As, Ge, Si0.5Ge0.5, and Si films. It is found that depending on the channel material and channel thickness, the EHBTFET can operate either as a 2-D-2-D or 3-D-3-D tunneling device. InAs offers the highest I ON, whereas for the Si and Si0.5Ge0.5 EHBTFETs, significant current levels cannot be achieved within a reasonable voltage range. The general trends are explained through an analytical model that shows close agreement with the numerical results.
The Electron–Hole Bilayer TFET: Dimensionality Effects and Optimization / Alper, Cem; Palestri, Pierpaolo; Padilla, Jose Luis; Ionescu, Adrian M.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 63:6(2016), pp. 2603-2609. [10.1109/TED.2016.2557282]
The Electron–Hole Bilayer TFET: Dimensionality Effects and Optimization
PALESTRI, Pierpaolo;
2016
Abstract
An extensive parameter analysis is performed on the electron-hole bilayer tunnel field-effect transistor (EHBTFET) using a 1-D effective mass Schrödinger-Poisson solver with corrections for band non-parabolicity considering thin InAs, In0.53Ga0.47As, Ge, Si0.5Ge0.5, and Si films. It is found that depending on the channel material and channel thickness, the EHBTFET can operate either as a 2-D-2-D or 3-D-3-D tunneling device. InAs offers the highest I ON, whereas for the Si and Si0.5Ge0.5 EHBTFETs, significant current levels cannot be achieved within a reasonable voltage range. The general trends are explained through an analytical model that shows close agreement with the numerical results.
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AlperTED16_versioneIRIS.pdf
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AlperTED16.pdf
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