Measurements and Monte Carlo simulations of impact ionization in the base-collector region of SiGe HBTs are presented. A device with low germanium concentration (graded from 0 to 12%) is considered and no differences are found between the experimental multiplication factor in that device and the corresponding silicon control. Because impact ionization (II) occurs inside the bulk-Si collector, phonon and II scattering rates for bulk silicon can be used in the Monte Carlo simulation, avoiding the need to model the strained SiGe layers. Full-Band Monte Carlo simulations are shown to reproduce the multiplication factors measured in SiGe devices featuring different collector profiles.
Monte Carlo Simulation of Impact Ionization in SiGe HBTs / Palestri, P., Pacelli, A., Mastrapasqua, M., Bude, J.D.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 22:11(2001), pp. 533-535. [10.1109/55.962654]
Monte Carlo Simulation of Impact Ionization in SiGe HBTs
PALESTRI, Pierpaolo;
2001
Abstract
Measurements and Monte Carlo simulations of impact ionization in the base-collector region of SiGe HBTs are presented. A device with low germanium concentration (graded from 0 to 12%) is considered and no differences are found between the experimental multiplication factor in that device and the corresponding silicon control. Because impact ionization (II) occurs inside the bulk-Si collector, phonon and II scattering rates for bulk silicon can be used in the Monte Carlo simulation, avoiding the need to model the strained SiGe layers. Full-Band Monte Carlo simulations are shown to reproduce the multiplication factors measured in SiGe devices featuring different collector profiles.
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