Hot Carrier Injection (HCI) is investigated from the experimental and modelling perspectives. Extensive characterization of HCI is performed on ash devices to overcome the difculties arising from direct gate injection measurements. Furthermore, a semi-analytical approach has been developped, capable of modelling both ash cell’s electrostatics during transient operation and gate current under HCI by a non-local model valid for long and short channel devices.
Characterization and modelling of gate current injection in embedded non-volatile flash memory / Zaka, A; Garetto, D; Rideau, D; Palestri, Pierpaolo; Manceau, J. P.; Dornel, E; Rafhay, Q; Clerc, R; Leblebici, Y; Tavernier, C; Jaouen, H.. - (2011), pp. 130-135. (Intervento presentato al convegno 2011 24th IEEE International Conference on Microelectronic Test Structures, ICMTS 2011 tenutosi a Amsterdam, nld nel 2011) [10.1109/ICMTS.2011.5976874].
Characterization and modelling of gate current injection in embedded non-volatile flash memory
PALESTRI, Pierpaolo;
2011
Abstract
Hot Carrier Injection (HCI) is investigated from the experimental and modelling perspectives. Extensive characterization of HCI is performed on ash devices to overcome the difculties arising from direct gate injection measurements. Furthermore, a semi-analytical approach has been developped, capable of modelling both ash cell’s electrostatics during transient operation and gate current under HCI by a non-local model valid for long and short channel devices.
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