We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of Schroedinger-Poisson system, using the Finite Element Method. The quantum mechanical model includes direct as well as phonon-assisted transitions and it is applied to Germanium electron-hole bilayer tunnel FETs (EHBTFET). It is found that 2D direct tunneling through the underlap regions may degrade the subthreshold characteristic of germanium EHBTFETs and requires careful device optimization to make the tunneling in the overlap region dominate over the parasitic paths.

Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices / C., Alper; Palestri, Pierpaolo; L., Lattanzio; J. L., Padilla; A. M., Ionescu. - (2014), pp. 186-189. (Intervento presentato al convegno 44th European Solid-State Device Research Conference, ESSDERC 2014 tenutosi a Venezia (Italy) nel 22-26 Settembre 2014) [10.1109/ESSDERC.2014.6948791].

Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices

PALESTRI, Pierpaolo;
2014

Abstract

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of Schroedinger-Poisson system, using the Finite Element Method. The quantum mechanical model includes direct as well as phonon-assisted transitions and it is applied to Germanium electron-hole bilayer tunnel FETs (EHBTFET). It is found that 2D direct tunneling through the underlap regions may degrade the subthreshold characteristic of germanium EHBTFETs and requires careful device optimization to make the tunneling in the overlap region dominate over the parasitic paths.
2014
44th European Solid-State Device Research Conference, ESSDERC 2014
Venezia (Italy)
22-26 Settembre 2014
186
189
C., Alper; Palestri, Pierpaolo; L., Lattanzio; J. L., Padilla; A. M., Ionescu
Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices / C., Alper; Palestri, Pierpaolo; L., Lattanzio; J. L., Padilla; A. M., Ionescu. - (2014), pp. 186-189. (Intervento presentato al convegno 44th European Solid-State Device Research Conference, ESSDERC 2014 tenutosi a Venezia (Italy) nel 22-26 Settembre 2014) [10.1109/ESSDERC.2014.6948791].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1328039
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