We present a characterization of self-heating in a 0.25mum SiGe BiCMOS technology on bulk and SOI substrates. Measurements are compared with analytical models and simulations. Thermal coupling between emitter fingers and effect of metallization are also analyzed.
Thermal Resistance in Si(1-x) Ge(x) HBTs on Bulk and SOI Substrates / Palestri, Pierpaolo; A., Pacelli; M., Mastrapasqua. - (2001), pp. 98-101. (Intervento presentato al convegno BCTM tenutosi a Minneapolis, MN (USA) nel 30 Sep 2001-02 Oct 2001) [10.1109/BIPOL.2001.957866].
Thermal Resistance in Si(1-x) Ge(x) HBTs on Bulk and SOI Substrates
PALESTRI, Pierpaolo;
2001
Abstract
We present a characterization of self-heating in a 0.25mum SiGe BiCMOS technology on bulk and SOI substrates. Measurements are compared with analytical models and simulations. Thermal coupling between emitter fingers and effect of metallization are also analyzed.
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