The trade-off between gate length (Lgate), flicker noise and powder consumption in Low-Noise-Amplifiers (LNA) designed with 45nm FinFETs (FFs) has been investigated, in order to draw new design guidelines for this novel technology. The simulation results highlight the existence of an optimum Lgate which reduces the impact of flicker noise at minimum power consumption.
Design strategies for SOI FinFET Low-Noise Amplifiers: dealing with Flicker Noise / Ponton, Davide; Palestri, Pierpaolo; Parvais, B; Fulde, M.. - (2009), pp. 121-122. (Intervento presentato al convegno EUROSOI 2009 tenutosi a Göteborg (SW) nel gennaio).
Design strategies for SOI FinFET Low-Noise Amplifiers: dealing with Flicker Noise
PALESTRI, Pierpaolo;
2009
Abstract
The trade-off between gate length (Lgate), flicker noise and powder consumption in Low-Noise-Amplifiers (LNA) designed with 45nm FinFETs (FFs) has been investigated, in order to draw new design guidelines for this novel technology. The simulation results highlight the existence of an optimum Lgate which reduces the impact of flicker noise at minimum power consumption.
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2009_EUROSOI_Ponton_SoiFFflicker.pdf
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