We report the first In-Ga-Zn-O source-gated transistors on a flexible polyimide film. Our findings show that using Au contacts and the incorporation of an ultrathin SiO2 tunnel layer facilitate contact-controlled operation, distinct from conventional thin-film transistors with Ti contacts. This was confirmed by early saturation in the output characteristics and the very low saturation voltage change over a gate voltage change of < 0.1 V/V which agrees well with the theoretical saturation coefficient of ≈ 0.1.
In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2Tunnel Layer on a Flexible Polyimide Substrate / Corsino, D. C.; Bestelink, E.; Catania, F.; Sporea, R. A.; Munzenrieder, N.; Cantarella, G.. - (2023), pp. 1-3. (Intervento presentato al convegno 5th IEEE International Flexible Electronics Technology Conference, IFETC 2023 tenutosi a usa nel 2023) [10.1109/IFETC57334.2023.10254818].
In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2Tunnel Layer on a Flexible Polyimide Substrate
Cantarella G.
2023
Abstract
We report the first In-Ga-Zn-O source-gated transistors on a flexible polyimide film. Our findings show that using Au contacts and the incorporation of an ultrathin SiO2 tunnel layer facilitate contact-controlled operation, distinct from conventional thin-film transistors with Ti contacts. This was confirmed by early saturation in the output characteristics and the very low saturation voltage change over a gate voltage change of < 0.1 V/V which agrees well with the theoretical saturation coefficient of ≈ 0.1.
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