At the cutting-edge of microwave detection technology, novel approaches which exploit the interaction between microwaves and quantum devices are rising. In this study, microwaves are efficiently detected exploiting the unique transport features of InAs/InP nanowire double quantum dot-based devices, suitably configured to allow the precise and calibration-free measurement of the local field. Prototypical nanoscale detectors are operated both at zero and finite source-drain bias, addressing and rationalizing the microwave impact on the charge stability diagram. The detector performance is addressed by measuring its responsivity, quantum efficiency and noise equivalent power that, upon impedance matching optimization, are estimated to reach values up to approximate to 2000 A W-1, 0.04 and root HZ, respectively. The interaction mechanism between the microwave field and the quantum confined energy levels of the double quantum dots is unveiled and it is shown that these semiconductor nanostructures allow the direct assessment of the local intensity of the microwave field without the need for any calibration tool. Thus, the reported nanoscale devices based on III-V nanowire heterostructures represent a novel class of calibration-free and highly sensitive probes of microwave radiation, with nanometer-scale spatial resolution, that may foster the development of novel high-performance microwave circuitries.

Calibration-Free and High-Sensitivity Microwave Detectors Based on InAs/InP Nanowire Double Quantum Dots / Cornia, S; Demontis, V; Zannier, V; Sorba, L; Ghirri, A; Rossella, F; Affronte, M. - In: ADVANCED FUNCTIONAL MATERIALS. - ISSN 1616-301X. - 33:19(2023), pp. 2212517-2212526. [10.1002/adfm.202212517]

Calibration-Free and High-Sensitivity Microwave Detectors Based on InAs/InP Nanowire Double Quantum Dots

Cornia, S
;
Sorba, L;Rossella, F;Affronte, M
2023

Abstract

At the cutting-edge of microwave detection technology, novel approaches which exploit the interaction between microwaves and quantum devices are rising. In this study, microwaves are efficiently detected exploiting the unique transport features of InAs/InP nanowire double quantum dot-based devices, suitably configured to allow the precise and calibration-free measurement of the local field. Prototypical nanoscale detectors are operated both at zero and finite source-drain bias, addressing and rationalizing the microwave impact on the charge stability diagram. The detector performance is addressed by measuring its responsivity, quantum efficiency and noise equivalent power that, upon impedance matching optimization, are estimated to reach values up to approximate to 2000 A W-1, 0.04 and root HZ, respectively. The interaction mechanism between the microwave field and the quantum confined energy levels of the double quantum dots is unveiled and it is shown that these semiconductor nanostructures allow the direct assessment of the local intensity of the microwave field without the need for any calibration tool. Thus, the reported nanoscale devices based on III-V nanowire heterostructures represent a novel class of calibration-free and highly sensitive probes of microwave radiation, with nanometer-scale spatial resolution, that may foster the development of novel high-performance microwave circuitries.
2023
gen-2023
33
19
2212517
2212526
Calibration-Free and High-Sensitivity Microwave Detectors Based on InAs/InP Nanowire Double Quantum Dots / Cornia, S; Demontis, V; Zannier, V; Sorba, L; Ghirri, A; Rossella, F; Affronte, M. - In: ADVANCED FUNCTIONAL MATERIALS. - ISSN 1616-301X. - 33:19(2023), pp. 2212517-2212526. [10.1002/adfm.202212517]
Cornia, S; Demontis, V; Zannier, V; Sorba, L; Ghirri, A; Rossella, F; Affronte, M
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1321646
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