Optical constants of SiC thin films deposited with RF magnetron sputtering have been derived in the VUV. The films have been deposited with different parameters resulting in various C/Si ratios. Reflectance measurements have been made with a dedicated facility in the range 300–1300 ´°A . Index of refraction and absorption coefficient have been derived by fitting the reflectance data with the calculated ones.
VUV Reflectance measurements and optical constants of SiC thin films / Nicolosi, Piergiorgio; Pelizzo, M. G.; Garoli, Denis; V., Rigato; Patelli, Alessandro; F., Rigato. - In: JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. - ISSN 0368-2048. - 144-147:(2005), pp. 987-992. [10.1016/j.elspec.2005.01.248]
VUV Reflectance measurements and optical constants of SiC thin films
NICOLOSI, PIERGIORGIO;GAROLI, DENIS;
2005
Abstract
Optical constants of SiC thin films deposited with RF magnetron sputtering have been derived in the VUV. The films have been deposited with different parameters resulting in various C/Si ratios. Reflectance measurements have been made with a dedicated facility in the range 300–1300 ´°A . Index of refraction and absorption coefficient have been derived by fitting the reflectance data with the calculated ones.
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