Thin films of silicon carbide (SiC) have been prepared by means of pulsed laser deposition (PLD) on sapphire (Al(2)O(3)) and Si(100) substrates with a Nd-YAG laser 1064 nm. We achieved the growth of cubic silicon carbide (3C-SiC) films at the temperatures of 650A degrees C from a SiC target in vacuum. The as-deposited films are morphologically and structurally characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The use of off-axis PLD method placing the sample at 90A degrees with respect to the target leads to a good quality smooth film.
Synthesis of heteroepytaxial 3C-SiC by means of PLD / Monaco, G; Garoli, D; Natali, M; Pelizzo, Mg; Nicolosi, P. - In: APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING. - ISSN 0947-8396. - 105:1(2011), pp. 225-231. [10.1007/s00339-011-6494-x]
Synthesis of heteroepytaxial 3C-SiC by means of PLD
Garoli D;
2011
Abstract
Thin films of silicon carbide (SiC) have been prepared by means of pulsed laser deposition (PLD) on sapphire (Al(2)O(3)) and Si(100) substrates with a Nd-YAG laser 1064 nm. We achieved the growth of cubic silicon carbide (3C-SiC) films at the temperatures of 650A degrees C from a SiC target in vacuum. The as-deposited films are morphologically and structurally characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The use of off-axis PLD method placing the sample at 90A degrees with respect to the target leads to a good quality smooth film.
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