We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 1010 cm-2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K-1, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides / Miseikis, V.; Marconi, S.; Giambra, M. A.; Montanaro, A.; Martini, L.; Fabbri, F.; Pezzini, S.; Piccinini, G.; Forti, S.; Terres, B.; Goykhman, I.; Hamidouche, L.; Legagneux, P.; Sorianello, V.; Ferrari, A. C.; Koppens, F. H. L.; Romagnoli, M.; Coletti, C.. - In: ACS NANO. - ISSN 1936-0851. - 14:9(2020), pp. 11190-11204. [10.1021/acsnano.0c02738]

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

Martini L.;Ferrari A. C.;
2020

Abstract

We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 1010 cm-2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K-1, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.
2020
14
9
11190
11204
Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides / Miseikis, V.; Marconi, S.; Giambra, M. A.; Montanaro, A.; Martini, L.; Fabbri, F.; Pezzini, S.; Piccinini, G.; Forti, S.; Terres, B.; Goykhman, I.; Hamidouche, L.; Legagneux, P.; Sorianello, V.; Ferrari, A. C.; Koppens, F. H. L.; Romagnoli, M.; Coletti, C.. - In: ACS NANO. - ISSN 1936-0851. - 14:9(2020), pp. 11190-11204. [10.1021/acsnano.0c02738]
Miseikis, V.; Marconi, S.; Giambra, M. A.; Montanaro, A.; Martini, L.; Fabbri, F.; Pezzini, S.; Piccinini, G.; Forti, S.; Terres, B.; Goykhman, I.; Hamidouche, L.; Legagneux, P.; Sorianello, V.; Ferrari, A. C.; Koppens, F. H. L.; Romagnoli, M.; Coletti, C.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1307470
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