Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V-1s-1 and 16 cm2V-1s-1 for coplanar and staggered architectures, respectively. Integration of In2O3 transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In2O3 also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In2O3 transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.

Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits / Petti, L; Faber, H; Münzenrieder, N; Cantarella, G; Patsalas, P; Tröster, G; Anthopoulos, T. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 106:9(2015). [10.1063/1.4914085]

Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits

Cantarella G;
2015

Abstract

Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V-1s-1 and 16 cm2V-1s-1 for coplanar and staggered architectures, respectively. Integration of In2O3 transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In2O3 also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In2O3 transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.
2015
106
9
Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits / Petti, L; Faber, H; Münzenrieder, N; Cantarella, G; Patsalas, P; Tröster, G; Anthopoulos, T. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 106:9(2015). [10.1063/1.4914085]
Petti, L; Faber, H; Münzenrieder, N; Cantarella, G; Patsalas, P; Tröster, G; Anthopoulos, T
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1290923
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