In this work, we study the electronic properties of Ge6Sb1Te2 compounds in thin-film transistor architectures on plastic substrates, which enable the extraction of field-effect mobility μFE, carrier density, and polarity in highly resistive thin-films. We find that the Ge-rich compound exhibits n-type conductivity in the amorphous phase with a gradual transition to p-type behavior upon thermal annealing. At a temperature of 350 °C, the material undergoes a phase change, which is confirmed by x-ray diffraction measurements. After the phase change, μFE and the conductivity increase and the polarity becomes p-type, while the carrier density does not change significantly. Furthermore, we compare the properties of Ge6Sb1Te2 to the commonly studied material composition of Ge2Sb2Te5 in the Hall measurement and find that the carrier density of the Ge-rich compound is reduced by 2 orders of magnitude, which indicates that the significantly lower concentration of Ge vacancies leads to a reduction of p-type doping.
N-type to p-type transition upon phase change in Ge6Sb1Te2 compounds / Daus, A; Knobelspies, S; Cantarella, G; Tröster, G. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 113:10(2018). [10.1063/1.5042157]