In this letter, we report a flexible Indium-Gallium-Zinc-Oxide quasi-vertical thin-film transistor (QVTFT) with 300-nm channel length, fabricated on a free-standing polyimide foil, using a low-temperature process <150 degrees C. A bilayer lift-off process is used to structure a spacing layer with a tilted sidewall and the drain contact on top of the source electrode. The resulting quasi-vertical profile ensures a good coverage of the successive device layers. The fabricated flexible QVTFT exhibits an ON/OFF current ratio of 10(4), a threshold voltage of 1.5 V, a maximum transconductance of 0.73 mu S mu m(-1), and a total gate capacitance of 76 nF mu m(-1). From S-parameter measurements, we extracted a transit frequency of 1.5 MHz. Furthermore, the flexible QVTFT is fully operational when bent to a tensile radius of 5 mm.

Flexible Quasi-Vertical In-Ga-Zn-O Thin-Film Transistor With 300-nm Channel Length / Petti, L; Frutiger, A; Munzenrieder, N; Salvatore, Ga; Buthe, L; Vogt, C; Cantarella, G; Troster, G. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 36:5(2015), pp. 475-477. [10.1109/LED.2015.2418295]

Flexible Quasi-Vertical In-Ga-Zn-O Thin-Film Transistor With 300-nm Channel Length

Cantarella G;
2015-01-01

Abstract

In this letter, we report a flexible Indium-Gallium-Zinc-Oxide quasi-vertical thin-film transistor (QVTFT) with 300-nm channel length, fabricated on a free-standing polyimide foil, using a low-temperature process <150 degrees C. A bilayer lift-off process is used to structure a spacing layer with a tilted sidewall and the drain contact on top of the source electrode. The resulting quasi-vertical profile ensures a good coverage of the successive device layers. The fabricated flexible QVTFT exhibits an ON/OFF current ratio of 10(4), a threshold voltage of 1.5 V, a maximum transconductance of 0.73 mu S mu m(-1), and a total gate capacitance of 76 nF mu m(-1). From S-parameter measurements, we extracted a transit frequency of 1.5 MHz. Furthermore, the flexible QVTFT is fully operational when bent to a tensile radius of 5 mm.
36
5
475
477
Flexible Quasi-Vertical In-Ga-Zn-O Thin-Film Transistor With 300-nm Channel Length / Petti, L; Frutiger, A; Munzenrieder, N; Salvatore, Ga; Buthe, L; Vogt, C; Cantarella, G; Troster, G. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 36:5(2015), pp. 475-477. [10.1109/LED.2015.2418295]
Petti, L; Frutiger, A; Munzenrieder, N; Salvatore, Ga; Buthe, L; Vogt, C; Cantarella, G; Troster, G
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1290907
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 31
  • ???jsp.display-item.citation.isi??? 30
social impact