In this letter, a photolithographic fabrication process is used to manufacture indium-gallium-zinc-oxide thin-film transistors (TFTs) with mobilities > 10 cm ^{2}/Vs directly on a 80 μ m thick polydimethylsiloxane (PDMS) substrate. Once the fabrication is completed, the PDMS is detached from a silicon wafer used as carrier substrate. Due to the thermal mismatch between silicon and PDMS, the release results in a reduction of the PDMS area by 7.2%, which leads to the formation of out-of-plane wrinkles on the TFT surface. The reflattening of the wrinkles under tensile strain enables device functionality, while the TFTs are bent up to 2.3% strain. Mechanical stability of the TFTs with our wrinkled approach is shown by electrically characterizing them at bending radii down to 6 mm.

Flexible In-Ga-Zn-O Thin-Film Transistors on Elastomeric Substrate Bent to 2.3% Strain / Cantarella, G; Münzenrieder, N; Petti, L; Vogt, C; Buthe, L; Salvatore, G; Daus, A; Troster, G. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 36:8(2015), pp. 781-783. [10.1109/LED.2015.2442271]

Flexible In-Ga-Zn-O Thin-Film Transistors on Elastomeric Substrate Bent to 2.3% Strain

Cantarella G;
2015

Abstract

In this letter, a photolithographic fabrication process is used to manufacture indium-gallium-zinc-oxide thin-film transistors (TFTs) with mobilities > 10 cm ^{2}/Vs directly on a 80 μ m thick polydimethylsiloxane (PDMS) substrate. Once the fabrication is completed, the PDMS is detached from a silicon wafer used as carrier substrate. Due to the thermal mismatch between silicon and PDMS, the release results in a reduction of the PDMS area by 7.2%, which leads to the formation of out-of-plane wrinkles on the TFT surface. The reflattening of the wrinkles under tensile strain enables device functionality, while the TFTs are bent up to 2.3% strain. Mechanical stability of the TFTs with our wrinkled approach is shown by electrically characterizing them at bending radii down to 6 mm.
2015
36
8
781
783
Flexible In-Ga-Zn-O Thin-Film Transistors on Elastomeric Substrate Bent to 2.3% Strain / Cantarella, G; Münzenrieder, N; Petti, L; Vogt, C; Buthe, L; Salvatore, G; Daus, A; Troster, G. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 36:8(2015), pp. 781-783. [10.1109/LED.2015.2442271]
Cantarella, G; Münzenrieder, N; Petti, L; Vogt, C; Buthe, L; Salvatore, G; Daus, A; Troster, G
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1290896
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