In this letter, we report a flexible complementary common-source (CS) amplifier comprising one p-type spray-coated singlewalled carbon nanotube and one n-type sputtered InGaZnO4 thin-film transistor (TFT). Bottom-gate TFTs were realized on a free-standing flexible polyimide foil using amaximumprocess temperature of 150 degrees C. The resulting CS amplifier operates at 10 V supply voltage and exhibits a gain bandwidth product of 60 kHz. Thanks to the use of a p-type TFT acting as a tunable current source load, the amplifier gain can be programmed from3.5 up to 27.2V/V (28.7 dB). To the best of our knowledge, this is the highest gain ever obtained for a flexible single-stage CS amplifier.

Gain-Tunable Complementary Common-Source Amplifier Based on a Flexible Hybrid Thin-Film Transistor Technology / Petti, L; Loghin, F; Cantarella, G; Vogt, C; Münzenrieder, N; Abdellah, A; Becherer, M; Haeberle, T; Daus, A; Salvatore, G; Troster, G; Lugli, P. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 38:11(2017), pp. 1536-1539. [10.1109/LED.2017.2748596]

Gain-Tunable Complementary Common-Source Amplifier Based on a Flexible Hybrid Thin-Film Transistor Technology

Cantarella G;
2017-01-01

Abstract

In this letter, we report a flexible complementary common-source (CS) amplifier comprising one p-type spray-coated singlewalled carbon nanotube and one n-type sputtered InGaZnO4 thin-film transistor (TFT). Bottom-gate TFTs were realized on a free-standing flexible polyimide foil using amaximumprocess temperature of 150 degrees C. The resulting CS amplifier operates at 10 V supply voltage and exhibits a gain bandwidth product of 60 kHz. Thanks to the use of a p-type TFT acting as a tunable current source load, the amplifier gain can be programmed from3.5 up to 27.2V/V (28.7 dB). To the best of our knowledge, this is the highest gain ever obtained for a flexible single-stage CS amplifier.
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Gain-Tunable Complementary Common-Source Amplifier Based on a Flexible Hybrid Thin-Film Transistor Technology / Petti, L; Loghin, F; Cantarella, G; Vogt, C; Münzenrieder, N; Abdellah, A; Becherer, M; Haeberle, T; Daus, A; Salvatore, G; Troster, G; Lugli, P. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 38:11(2017), pp. 1536-1539. [10.1109/LED.2017.2748596]
Petti, L; Loghin, F; Cantarella, G; Vogt, C; Münzenrieder, N; Abdellah, A; Becherer, M; Haeberle, T; Daus, A; Salvatore, G; Troster, G; Lugli, P
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1290888
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