This paper reviews the recent progress of active high-frequency electronics on plastic, and gives an outlook towards future advances of radio-frequency electronics in the amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology. Our a-IGZO technology is mechanically flexible, bendable and stretchable. A 0.5 mu m TFT achieved a measured transit frequency of 138 MHz. We have presented several high-frequency circuits integrated in this a-IGZO technology, including several RF amplifiers and a fully-integrated AM receiver. The receiver consists of a four-stage cascode amplifier, an amplitude detector, a baseband amplifier, and a filter. At a DC current of 7.2 mA and a supply of 5 V, a conversion gain above 15dB was measured from 2 to 20MHz. Based on these works, we are investigating a wireless transmitter to be fully integrated on a plastic film. Some simulation results of a ring-oscillator based on-off-keying modulator and an LC voltage controlled oschillator under investigation are presented.

Radio Frequency Electronics in a-IGZO TFT Technology (Invited) / Ishida, K; Meister, T; Shabanpour, R; Boroujeni, Bk; Carta, C; Cantarella, G; Petti, L; Münzenrieder, N; Salvatore, Ga; Troster, G; Ellinger, F. - (2016), pp. 273-276. ((Intervento presentato al convegno 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) tenutosi a Kyoto nel 6.7.2016 - 8.7.2016 [10.1109/AM-FPD.2016.7543689].

Radio Frequency Electronics in a-IGZO TFT Technology (Invited)

Cantarella G;
2016-01-01

Abstract

This paper reviews the recent progress of active high-frequency electronics on plastic, and gives an outlook towards future advances of radio-frequency electronics in the amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology. Our a-IGZO technology is mechanically flexible, bendable and stretchable. A 0.5 mu m TFT achieved a measured transit frequency of 138 MHz. We have presented several high-frequency circuits integrated in this a-IGZO technology, including several RF amplifiers and a fully-integrated AM receiver. The receiver consists of a four-stage cascode amplifier, an amplitude detector, a baseband amplifier, and a filter. At a DC current of 7.2 mA and a supply of 5 V, a conversion gain above 15dB was measured from 2 to 20MHz. Based on these works, we are investigating a wireless transmitter to be fully integrated on a plastic film. Some simulation results of a ring-oscillator based on-off-keying modulator and an LC voltage controlled oschillator under investigation are presented.
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
Kyoto
6.7.2016 - 8.7.2016
273
276
Ishida, K; Meister, T; Shabanpour, R; Boroujeni, Bk; Carta, C; Cantarella, G; Petti, L; Münzenrieder, N; Salvatore, Ga; Troster, G; Ellinger, F
Radio Frequency Electronics in a-IGZO TFT Technology (Invited) / Ishida, K; Meister, T; Shabanpour, R; Boroujeni, Bk; Carta, C; Cantarella, G; Petti, L; Münzenrieder, N; Salvatore, Ga; Troster, G; Ellinger, F. - (2016), pp. 273-276. ((Intervento presentato al convegno 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) tenutosi a Kyoto nel 6.7.2016 - 8.7.2016 [10.1109/AM-FPD.2016.7543689].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1290868
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