Electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor of interest because of its magnetic properties, is investigated. An extremely pronounced anisotropy manifesting itself in qualitative and quantitative differences of all quantities measured along the in-plane a and b crystallographic directions is found. In particular, a qualitatively different dependence of the conductivities σa and σb on temperature and gate voltage, accompanied by orders of magnitude differences in their values (σb/σa ≈ 3 × 102 to 105 at low temperature and negative gate voltage) are observed, together with a different behavior of the longitudinal magnetoresistance in the two directions and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology—and unambiguous signatures of a 1D van Hove singularity detected in energy-resolved photocurrent measurements—indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. It is concluded that CrSBr is the first 2D semiconductor to show distinctly quasi-1D electronic transport properties.

Quasi-1D Electronic Transport in a 2D Magnetic Semiconductor / Wu, F.; Gutierrez-Lezama, I.; Lopez-Paz, S. A.; Gibertini, M.; Watanabe, K.; Taniguchi, T.; von Rohr, F. O.; Ubrig, N.; Morpurgo, A. F.. - In: ADVANCED MATERIALS. - ISSN 0935-9648. - 34:16(2022), pp. N/A-N/A. [10.1002/adma.202109759]

Quasi-1D Electronic Transport in a 2D Magnetic Semiconductor

Gibertini M.;
2022

Abstract

Electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor of interest because of its magnetic properties, is investigated. An extremely pronounced anisotropy manifesting itself in qualitative and quantitative differences of all quantities measured along the in-plane a and b crystallographic directions is found. In particular, a qualitatively different dependence of the conductivities σa and σb on temperature and gate voltage, accompanied by orders of magnitude differences in their values (σb/σa ≈ 3 × 102 to 105 at low temperature and negative gate voltage) are observed, together with a different behavior of the longitudinal magnetoresistance in the two directions and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology—and unambiguous signatures of a 1D van Hove singularity detected in energy-resolved photocurrent measurements—indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. It is concluded that CrSBr is the first 2D semiconductor to show distinctly quasi-1D electronic transport properties.
2022
34
16
N/A
N/A
Quasi-1D Electronic Transport in a 2D Magnetic Semiconductor / Wu, F.; Gutierrez-Lezama, I.; Lopez-Paz, S. A.; Gibertini, M.; Watanabe, K.; Taniguchi, T.; von Rohr, F. O.; Ubrig, N.; Morpurgo, A. F.. - In: ADVANCED MATERIALS. - ISSN 0935-9648. - 34:16(2022), pp. N/A-N/A. [10.1002/adma.202109759]
Wu, F.; Gutierrez-Lezama, I.; Lopez-Paz, S. A.; Gibertini, M.; Watanabe, K.; Taniguchi, T.; von Rohr, F. O.; Ubrig, N.; Morpurgo, A. F.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1288331
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