Progress in tailoring the size, shape and positioning of Quantum Dots on the substrate is crucial for their potential applications in new optoelectronic devices for nano-photonics as well as in quantum information and computation. Using Molecular Beam Epitaxy in pulsed deposition mode we demonstrate that the nucleation of InAs Quantum Dots can be selectively guided on the GaAs(001) surface by a suitable choice of the kinetic parameters for the growth of both the GaAs buffer layer and the InAs Quantum Dots. By developing a two-species rate-equation kinetic model we show that the positioning of the Quantum Dots on only one side of mounds of the GaAs buffer can be traced back to the very small As flux gradient between the two mound slopes (ΔFA/F A ≈1-5%) caused by the proper tilting of the incoming As flux. Such gradient originates, at the relatively high growth-temperature, a net cation flow from one slope of the mound to the other that is responsible for the selective growth. © 2013 Materials Research Society.
Role of as in the anisotropic positioning of self-assembled InAs quantum dots / Arciprete, F.; Placidi, E.; Magri, R.; Fanfoni, M.; Balzarotti, A.; Patella, F.. - In: MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS. - ISSN 0272-9172. - 1551:(2014), pp. 3-9. (Intervento presentato al convegno 2013 MRS Spring Meeting tenutosi a San Francisco, CA, usa nel 2013) [10.1557/opl.2013.892].
Role of as in the anisotropic positioning of self-assembled InAs quantum dots
Magri R.;
2014
Abstract
Progress in tailoring the size, shape and positioning of Quantum Dots on the substrate is crucial for their potential applications in new optoelectronic devices for nano-photonics as well as in quantum information and computation. Using Molecular Beam Epitaxy in pulsed deposition mode we demonstrate that the nucleation of InAs Quantum Dots can be selectively guided on the GaAs(001) surface by a suitable choice of the kinetic parameters for the growth of both the GaAs buffer layer and the InAs Quantum Dots. By developing a two-species rate-equation kinetic model we show that the positioning of the Quantum Dots on only one side of mounds of the GaAs buffer can be traced back to the very small As flux gradient between the two mound slopes (ΔFA/F A ≈1-5%) caused by the proper tilting of the incoming As flux. Such gradient originates, at the relatively high growth-temperature, a net cation flow from one slope of the mound to the other that is responsible for the selective growth. © 2013 Materials Research Society.Pubblicazioni consigliate
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