This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results have been implemented into a non linear Gummel Poon model which has been validated through the design of a DRO made of an integrated SiGe negative resistance in the 10 GHz range. We have obtained phase noise of -105 dBc/Hz at 10 kHz offset, which is close to the state of the art, and we have demonstrated a design technique that provides an accurate phase noise prediction.
Low frequency noise characterization and modeling of microwave bipolar devices: Application to the design of low phase noise oscillator / Bary, L.; Cibiel, G.; Telliez, I.; Rayssac, J.; Rennane, A.; Boulanger, C.; Llopis, O.; Borgarino, M.; Plana, R.; Graffeuil, J.. - (2002), pp. 359-362. (Intervento presentato al convegno 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium tenutosi a Seatle, WA, usa nel 2002).
Low frequency noise characterization and modeling of microwave bipolar devices: Application to the design of low phase noise oscillator
Borgarino M.;
2002
Abstract
This paper addresses advanced low frequency noise measurements and modeling of SiGe HBTs. Results have been implemented into a non linear Gummel Poon model which has been validated through the design of a DRO made of an integrated SiGe negative resistance in the 10 GHz range. We have obtained phase noise of -105 dBc/Hz at 10 kHz offset, which is close to the state of the art, and we have demonstrated a design technique that provides an accurate phase noise prediction.
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