EnglishIn this study, we provide insight into the mechanism of retention degradation after endurance cycling of HfO2-based ferroelectric field-effect transistors (FeFETs). Transfer characteristics of the FeFET are compared with the current-voltage response of the ferroelectric capacitors (FeCAP) for better understanding of the retention loss mechanism after cycling. Furthermore, a multiscale simulation by using the Ginestra™ modeling platform is conducted and the results show that charge trapping stabilizes the polarization switching and improves the retention behavior. Retention after cycling experiments are shown as well as pathways to reduce this degradation mechanism.
Mechanism of Retention Degradation after Endurance Cycling of HfO2-based Ferroelectric Transistors / Zhou, H.; Ocker, J.; Pesic, M.; Padovani, A.; Trentzsch, M.; Dunkel, S.; Muller, J.; Beyer, S.; Larcher, L.; Koushan, F.; Muller, S.; Mikolajick, T.. - 2021-:(2021). ((Intervento presentato al convegno 41st Symposium on VLSI Technology, VLSI Technology 2021 tenutosi a jpn nel 2021.
| Data di pubblicazione: | 2021 | |
| Autore/i: | Zhou, H.; Ocker, J.; Pesic, M.; Padovani, A.; Trentzsch, M.; Dunkel, S.; Muller, J.; Beyer, S.; Larcher, L.; Koushan, F.; Muller, S.; Mikolajick, T. | |
| Titolo: | Mechanism of Retention Degradation after Endurance Cycling of HfO2-based Ferroelectric Transistors | |
| Nome del convegno: | 41st Symposium on VLSI Technology, VLSI Technology 2021 | |
| Luogo del convegno: | jpn | |
| Data del convegno: | 2021 | |
| Codice identificativo Scopus: | 2-s2.0-85125435210 | |
| Citazione: | Mechanism of Retention Degradation after Endurance Cycling of HfO2-based Ferroelectric Transistors / Zhou, H.; Ocker, J.; Pesic, M.; Padovani, A.; Trentzsch, M.; Dunkel, S.; Muller, J.; Beyer, S.; Larcher, L.; Koushan, F.; Muller, S.; Mikolajick, T.. - 2021-:(2021). ((Intervento presentato al convegno 41st Symposium on VLSI Technology, VLSI Technology 2021 tenutosi a jpn nel 2021. | |
| Tipologia | Abstract in Atti di Convegno |
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