We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitatively predict the gate current across ultra-thin oxides. Simulations nicely fit the experimental quantum oscillations of the gate current in the Fowler-Nordheim tunnelling regime. The oscillation period of the gate current has been empirically correlated with the oxide thickness. The low-field Stress Induced Leakage Current can be fitted by our model as well, by inserting oxide traps mediating an inelastic trap-assisted tunnelling.
New model of tunnelling current and SILC in ultra-thin oxides / Larcher, L., Paccagnella, A., Scarpa, A., Ghidini, G.. - (1998), pp. 901-904. (International Electron Devices Meeting (IEDM) San Francisco, CA, USA, DEC 06-09, 1998) [10.1109/IEDM.1998.746500].
New model of tunnelling current and SILC in ultra-thin oxides
Larcher L.;
1998
Abstract
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitatively predict the gate current across ultra-thin oxides. Simulations nicely fit the experimental quantum oscillations of the gate current in the Fowler-Nordheim tunnelling regime. The oscillation period of the gate current has been empirically correlated with the oxide thickness. The low-field Stress Induced Leakage Current can be fitted by our model as well, by inserting oxide traps mediating an inelastic trap-assisted tunnelling.
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