A new simple model for tunnel electron injection into oxides has been proposed, alterative to the conventionQ! FowlerNordheim expression. The latter fails to predict oscillations in the curren't-voltage curves in ultra-thin oxides, due to the limits of the WKB approximation. Our model nicely fits the experimental I-V results and can be used to investigate ultra-thin film characteristics. Finally, we propose an empirical law correlating oxide thickness to the I-V oscillation period.
A new model for tunneling conduction in ultra-thin dielectrics / Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G.. - (1998), pp. 316-319. (Intervento presentato al convegno 28th European Solid-State Device Research Conference, ESSDERC 1998 tenutosi a fra nel 1998).
A new model for tunneling conduction in ultra-thin dielectrics
Larcher L.;
1998
Abstract
A new simple model for tunnel electron injection into oxides has been proposed, alterative to the conventionQ! FowlerNordheim expression. The latter fails to predict oscillations in the curren't-voltage curves in ultra-thin oxides, due to the limits of the WKB approximation. Our model nicely fits the experimental I-V results and can be used to investigate ultra-thin film characteristics. Finally, we propose an empirical law correlating oxide thickness to the I-V oscillation period.
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