This work for the first time describes the results of hot electron stress experiments performed on InAlAs/InGaAs/InP HEMTs. Both DC and RF device degradation have been studied. The main effect observed is a reduction of the DC transconductance at high gate bias; at RF this results in a decrease of current and power gain, hence of the device cutoff frequencies.
Hot electron degradation of the DC and microwave performance of InAlAs/InGaAs/InP HEMTs / Menozzi, R.; Borgarino, M.; Baeyeans, Y.; Van Hove, M.; Fantini, F.. - (1996), pp. 1009-1012. (Intervento presentato al convegno 26th European Solid State Device Research Conference, ESSDERC 1996 tenutosi a Congress Centre, ita nel 1996).
Hot electron degradation of the DC and microwave performance of InAlAs/InGaAs/InP HEMTs
Borgarino M.;
1996
Abstract
This work for the first time describes the results of hot electron stress experiments performed on InAlAs/InGaAs/InP HEMTs. Both DC and RF device degradation have been studied. The main effect observed is a reduction of the DC transconductance at high gate bias; at RF this results in a decrease of current and power gain, hence of the device cutoff frequencies.
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