AlGaAs/GaAs HBTs play a significant role in the market of wireless products. Using HBT devices fabricated at LAAS and tested on-wafer, the effects of BE diffusion on the device RF characteristics, and their correlation with the DC degradation mode are documented. The stress time and current dependences of the degradation are also resolved.
Study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress / Borgarino, M.; Menozzi, R.; Tasselli, J.; Marty, A.; Fantini, F.. - (1997), pp. 2-6. (Intervento presentato al convegno Proceedings of the 1997 GaAs Reliability Workshop tenutosi a Anaheim, CA, USA, nel 1997) [10.1109/GAASRW.1997.656113].
Study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress
Borgarino M.;
1997
Abstract
AlGaAs/GaAs HBTs play a significant role in the market of wireless products. Using HBT devices fabricated at LAAS and tested on-wafer, the effects of BE diffusion on the device RF characteristics, and their correlation with the DC degradation mode are documented. The stress time and current dependences of the degradation are also resolved.
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