In this paper we report on both the DC and low frequency noise (LFN) properties of InP/InGaAs heterojunction bipolar phototransistors (HPTs) featuring waveguide type illumination. Both DC and LFN measurements demonstrate the good quality of these devices. In particular, they exhibit a 1/f noise figure-of-merit of 2.10-8 μm2, which is exceptionally very good in the field of the compound semiconductor HBTs, where values around 10-7 μm2 are usually reported.
Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors / Borgarino, M.; Plana, R.; Fendler, M.; Vilcot, J. P.; Mollot, F.; Barette, J.; Decoster, D.; Graffeuil, J.. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 44:1(2000), pp. 59-62. [10.1016/S0038-1101(99)00246-4]
Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors
Borgarino M.;
2000
Abstract
In this paper we report on both the DC and low frequency noise (LFN) properties of InP/InGaAs heterojunction bipolar phototransistors (HPTs) featuring waveguide type illumination. Both DC and LFN measurements demonstrate the good quality of these devices. In particular, they exhibit a 1/f noise figure-of-merit of 2.10-8 μm2, which is exceptionally very good in the field of the compound semiconductor HBTs, where values around 10-7 μm2 are usually reported.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
