This papers reports on the microcharacterization of devices for optoelectronic and high-speed electronic applications by spectrally resolved cathodoluminescence. The advantages offered by the high lateral resolution, monochromatic imaging and depth resolved spectral analysis of the technique are presented. In particular, InP based semiconducting optical amplifiers and GaAs based pump lasers for optical fiber communications are characterized from the point of view of compositional inhomogeneities and defect generation in the active regions. GaAs based heterqjunction bipolar transistors and high electron mobility transitors are studied to respectively reveal Be outdiffusion from the base and break down walkout after bias aging. GaAs based solar cells are also investigated to show the correlation between dislocations and impurity gettering. Finally the limits of the technique are briefly discussed. © 1998 Elsevier Science Ltd. All rights reserved.
Study of degradation mechanisms in compound semiconductor based devices by SEM-cathodoluminescence / Salviati, G.; Zanotti-Fregonara, C.; Borgarino, M.; Lazzarini, L.; Cattani, L.; Cova, P.; Mazzer, M.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 38:6-8(1998), pp. 1199-1210. [10.1016/S0026-2714(98)00128-0]
Study of degradation mechanisms in compound semiconductor based devices by SEM-cathodoluminescence
Borgarino M.;Cattani L.;
1998
Abstract
This papers reports on the microcharacterization of devices for optoelectronic and high-speed electronic applications by spectrally resolved cathodoluminescence. The advantages offered by the high lateral resolution, monochromatic imaging and depth resolved spectral analysis of the technique are presented. In particular, InP based semiconducting optical amplifiers and GaAs based pump lasers for optical fiber communications are characterized from the point of view of compositional inhomogeneities and defect generation in the active regions. GaAs based heterqjunction bipolar transistors and high electron mobility transitors are studied to respectively reveal Be outdiffusion from the base and break down walkout after bias aging. GaAs based solar cells are also investigated to show the correlation between dislocations and impurity gettering. Finally the limits of the technique are briefly discussed. © 1998 Elsevier Science Ltd. All rights reserved.
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