In the present work the reliability of Carbon-doped GaInP/GaAs HBTs is evaluated by means of a current stress performed at room temperature. The impact of the stress on DC and RF characteristics and low frequency noise is reported, and a correlation between DC, RF, and noise variations is demonstrated. The effects observed are explained in terms of Carbon passivation by Hydrogen atoms released from passivation/semiconductor interface during the stress.
On the stability of the DC and RF gain of GaInP/GaAs HBTs / Borgarino, M.; Plana, R.; Tartarin, J. G.; Delage, S.; Blanck, H.; Fantini, F.; Graffeuil, J.. - (1996), pp. 37-43. (Intervento presentato al convegno Proceedings of the 1996 High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop - EDMO tenutosi a Leeds, UK, nel 1996) [10.1109/EDMO.1996.575794].
On the stability of the DC and RF gain of GaInP/GaAs HBTs
Borgarino M.;
1996
Abstract
In the present work the reliability of Carbon-doped GaInP/GaAs HBTs is evaluated by means of a current stress performed at room temperature. The impact of the stress on DC and RF characteristics and low frequency noise is reported, and a correlation between DC, RF, and noise variations is demonstrated. The effects observed are explained in terms of Carbon passivation by Hydrogen atoms released from passivation/semiconductor interface during the stress.
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