The present work compares two sets of Carbon doped GaInP/GaAs HBTs. The only difference between the device sets resides in the technology employed to passivate the extrinsic base surface region. The results demonstrate that the burn-in effect is a surface related phenomenon and that the ledge passivation technology is very promising to improve device reliability.
Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs / Borgarino, M.; Tartarin, J. G.; Delage, S.; Plana, R.; Fantini, F.; Graffeuil, J.. - (1997), pp. 43-48. (Intervento presentato al convegno Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO tenutosi a London, UK, nel NOV 24-25, 1997) [10.1109/EDMO.1997.668503].
Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs
Borgarino M.;
1997
Abstract
The present work compares two sets of Carbon doped GaInP/GaAs HBTs. The only difference between the device sets resides in the technology employed to passivate the extrinsic base surface region. The results demonstrate that the burn-in effect is a surface related phenomenon and that the ledge passivation technology is very promising to improve device reliability.
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