The ongoing miniaturization of electronic devices has boosted the development of new post-silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one of the most prominent materials being molybdenum disulfide (MoS2). A major obstacle for the industrial production of MoS2-based devices lies in the growth techniques. These must ensure the reliable fabrication of MoS2 with tailored 2D properties to allow for the typical direct bandgap of 1.9 eV, while maintaining large- area growth and device compatibility. In this work, we used a versatile and industrially scalable MoS2 growth method based on ionized jet deposition and annealing at 250 °C, through which a 3D stable and scalable material exhibiting excellent electronic and optical properties of 2D MoS2 is synthesized. The thickness-related limit, i.e., the desired optical and electronic properties being limited to 2D single/few-layered MoS2, was overcome in the thin film through the formation of encapsulated highly crystalline 2D MoS2 nanosheets exhibiting a bandgap of 1.9 eV and sharp optical emission. The newly synthesized 2D-in-3D MoS2 structure will facilitate device compatibility of 2D materials and confer superior optoelectronic device function.

2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film / Timpel, Melanie; Ligorio, Giovanni; Ghiami, Amir; Gavioli, Luca; Cavaliere, Emanuele; Chiappini, Andrea; Rossi, Francesca; Pasquali, Luca; Gärisch, Fabian; List-Kratochvil, Emil J. W.; Nozar, Petr; Quaranta, Alberto; Verucchi, Roberto; Nardi, Marco V.. - In: NPJ 2D MATERIALS AND APPLICATIONS. - ISSN 2397-7132. - 5:1(2021), pp. 1-10. [10.1038/s41699-021-00244-x]

2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

Pasquali, Luca;
2021

Abstract

The ongoing miniaturization of electronic devices has boosted the development of new post-silicon two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, one of the most prominent materials being molybdenum disulfide (MoS2). A major obstacle for the industrial production of MoS2-based devices lies in the growth techniques. These must ensure the reliable fabrication of MoS2 with tailored 2D properties to allow for the typical direct bandgap of 1.9 eV, while maintaining large- area growth and device compatibility. In this work, we used a versatile and industrially scalable MoS2 growth method based on ionized jet deposition and annealing at 250 °C, through which a 3D stable and scalable material exhibiting excellent electronic and optical properties of 2D MoS2 is synthesized. The thickness-related limit, i.e., the desired optical and electronic properties being limited to 2D single/few-layered MoS2, was overcome in the thin film through the formation of encapsulated highly crystalline 2D MoS2 nanosheets exhibiting a bandgap of 1.9 eV and sharp optical emission. The newly synthesized 2D-in-3D MoS2 structure will facilitate device compatibility of 2D materials and confer superior optoelectronic device function.
2021
5
1
1
10
2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film / Timpel, Melanie; Ligorio, Giovanni; Ghiami, Amir; Gavioli, Luca; Cavaliere, Emanuele; Chiappini, Andrea; Rossi, Francesca; Pasquali, Luca; Gärisch, Fabian; List-Kratochvil, Emil J. W.; Nozar, Petr; Quaranta, Alberto; Verucchi, Roberto; Nardi, Marco V.. - In: NPJ 2D MATERIALS AND APPLICATIONS. - ISSN 2397-7132. - 5:1(2021), pp. 1-10. [10.1038/s41699-021-00244-x]
Timpel, Melanie; Ligorio, Giovanni; Ghiami, Amir; Gavioli, Luca; Cavaliere, Emanuele; Chiappini, Andrea; Rossi, Francesca; Pasquali, Luca; Gärisch, Fa...espandi
File in questo prodotto:
File Dimensione Formato  
NPJ2Dmaterials 2021.pdf

Open access

Descrizione: Articolo principale
Tipologia: Versione pubblicata dall'editore
Dimensione 2.05 MB
Formato Adobe PDF
2.05 MB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1248591
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 31
  • ???jsp.display-item.citation.isi??? 30
social impact