The electrical stability of metal insulator semiconductor (MIS) capacitors and field effect transistor structures based in organic semiconductors were investigated. The device characteristics were studied using steady state measurements AC admittance measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence that an electrical instability occurs above 200 K. and is caused by an electronic trapping process. It is suggested that the trapping sites are created by a change in the organic conjugated chain, a process similar to a phase transition.
Meta-stability effects in organic based transistors / Gomes, H. L.; Stallinga, P.; Murgia, M.; Biscarini, F.; Muck, T.; Wagner, V.; Smits, E.; De Leeuw, D. M.. - 5940:(2005), pp. 1-8. (Intervento presentato al convegno Organic Field-Effect Transistors IV tenutosi a San Diego, CA, usa nel 2005) [10.1117/12.617862].
Meta-stability effects in organic based transistors
Biscarini F.;
2005
Abstract
The electrical stability of metal insulator semiconductor (MIS) capacitors and field effect transistor structures based in organic semiconductors were investigated. The device characteristics were studied using steady state measurements AC admittance measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence that an electrical instability occurs above 200 K. and is caused by an electronic trapping process. It is suggested that the trapping sites are created by a change in the organic conjugated chain, a process similar to a phase transition.
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