The electrical stability of metal-insulator-semiconductor (MIS) capacitors and field-effect transistor structures based in organic semiconductors were investigated. The device characteristics were studied using steady state measurements AC admittance measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence that an electrical instability occurs above 200 K and is caused by an electronic trapping process. Experimental results show that water is responsible for the trapping mechanism. © 2006 Elsevier B.V. All rights reserved.
The effect of water related traps on the reliability of organic based transistors / Gomes, H. L.; Stallinga, P.; Colle, M.; Biscarini, F.; de Leeuw, D. M.. - In: JOURNAL OF NON-CRYSTALLINE SOLIDS. - ISSN 0022-3093. - 352:9-20(2006), pp. 1761-1764. [10.1016/j.jnoncrysol.2005.10.069]
The effect of water related traps on the reliability of organic based transistors
Biscarini F.;
2006
Abstract
The electrical stability of metal-insulator-semiconductor (MIS) capacitors and field-effect transistor structures based in organic semiconductors were investigated. The device characteristics were studied using steady state measurements AC admittance measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence that an electrical instability occurs above 200 K and is caused by an electronic trapping process. Experimental results show that water is responsible for the trapping mechanism. © 2006 Elsevier B.V. All rights reserved.
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