We demonstrate localization and field-effect spatial control of the plasmon resonance in semiconductor nanostructures, using scattering-type scanning near-field optical microscopy in the mid-infrared region. We adopt InAs nanowires embedding a graded doping profile to modulate the free carrier density along the axial direction. Our near-field measurements have a spatial resolution of 20 nm and demonstrate the presence of a local resonant feature whose position can be controlled by a back-gate bias voltage. In the present implementation, field-effect induces a modulation of the free carrier density profile yielding a spatial shift of the plasmon resonance of the order of 100 nm. We discuss the relevance of our electrically tunable nanoplasmonic architectures in view of innovative optoelectronic devices concepts.
Gate-Tunable Spatial Modulation of Localized Plasmon Resonances / Arcangeli, A., Rossella, F., Tomadin, A., Xu, J., Ercolani, D., Sorba, L., Beltram, F., Tredicucci, A., Polini, M., Roddaro, S.. - In: NANO LETTERS. - ISSN 1530-6984. - 16:9(2016), pp. 5688-5693. [10.1021/acs.nanolett.6b02351]
Gate-Tunable Spatial Modulation of Localized Plasmon Resonances
ROSSELLA, FRANCESCO;ERCOLANI, Daniele;SORBA, LUCIA;
2016
Abstract
We demonstrate localization and field-effect spatial control of the plasmon resonance in semiconductor nanostructures, using scattering-type scanning near-field optical microscopy in the mid-infrared region. We adopt InAs nanowires embedding a graded doping profile to modulate the free carrier density along the axial direction. Our near-field measurements have a spatial resolution of 20 nm and demonstrate the presence of a local resonant feature whose position can be controlled by a back-gate bias voltage. In the present implementation, field-effect induces a modulation of the free carrier density profile yielding a spatial shift of the plasmon resonance of the order of 100 nm. We discuss the relevance of our electrically tunable nanoplasmonic architectures in view of innovative optoelectronic devices concepts.Pubblicazioni consigliate

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