We present the results of a systematic study performed by micro-Raman spectroscopy on pure anatase, pure rutile and mixed anatase-rutile TiO2 thin films, deposited by radio frequency magnetron sputtering on quartz substrates, with different thicknesses. The crystal structures of the as-deposited films were unambiguously determined and a good crystalline homogeneity was revealed by a systematic mapping of the samples. In the mixed-phase films, the relative amount of the two phases was monitored by a simple analysis of the components of the multi-Lorentzian fitting curves. For the single-phase films, the influence of the thickness and the effect of different thermal treatments, carried out to obtain series of thin films differing only for oxygen content, are discussed. The analysis of the scattered light has provided indication about the presence of an interface layer between the substrate and the film, which can play a role in driving the interesting magnetic properties exhibited by our samples, which are of potential usefulness for spintronics application. The results obtained from other techniques are briefly reported and discussed in relation to our systematic Raman characterization. This study points out how Raman investigation can provide suggestions toward the understanding of the complex physical phenomena leading to room-temperature ferromagnetism in TiO2 thin films.

TiO2 thin films for spintronics application: a Raman study / Rossella, Francesco; Galinetto, Pietro; Mozzati, MARIA CRISTINA; Malavasi, Lorenzo; DIAZ FERNANDEZ, YURI ANTONIO; Drera, Giovanni; Sangaletti, Luigi. - In: JOURNAL OF RAMAN SPECTROSCOPY. - ISSN 0377-0486. - 41:5(2010), pp. 558-565. [10.1002/jrs.2465]

TiO2 thin films for spintronics application: a Raman study

ROSSELLA, FRANCESCO;
2010

Abstract

We present the results of a systematic study performed by micro-Raman spectroscopy on pure anatase, pure rutile and mixed anatase-rutile TiO2 thin films, deposited by radio frequency magnetron sputtering on quartz substrates, with different thicknesses. The crystal structures of the as-deposited films were unambiguously determined and a good crystalline homogeneity was revealed by a systematic mapping of the samples. In the mixed-phase films, the relative amount of the two phases was monitored by a simple analysis of the components of the multi-Lorentzian fitting curves. For the single-phase films, the influence of the thickness and the effect of different thermal treatments, carried out to obtain series of thin films differing only for oxygen content, are discussed. The analysis of the scattered light has provided indication about the presence of an interface layer between the substrate and the film, which can play a role in driving the interesting magnetic properties exhibited by our samples, which are of potential usefulness for spintronics application. The results obtained from other techniques are briefly reported and discussed in relation to our systematic Raman characterization. This study points out how Raman investigation can provide suggestions toward the understanding of the complex physical phenomena leading to room-temperature ferromagnetism in TiO2 thin films.
2010
41
5
558
565
TiO2 thin films for spintronics application: a Raman study / Rossella, Francesco; Galinetto, Pietro; Mozzati, MARIA CRISTINA; Malavasi, Lorenzo; DIAZ FERNANDEZ, YURI ANTONIO; Drera, Giovanni; Sangaletti, Luigi. - In: JOURNAL OF RAMAN SPECTROSCOPY. - ISSN 0377-0486. - 41:5(2010), pp. 558-565. [10.1002/jrs.2465]
Rossella, Francesco; Galinetto, Pietro; Mozzati, MARIA CRISTINA; Malavasi, Lorenzo; DIAZ FERNANDEZ, YURI ANTONIO; Drera, Giovanni; Sangaletti, Luigi
File in questo prodotto:
File Dimensione Formato  
TiO2-thin-films-for-spintronics-application-A-raman-study_2010_Journal-of-Raman-Spectroscopy.pdf

Accesso riservato

Dimensione 2.63 MB
Formato Adobe PDF
2.63 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1247560
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 77
  • ???jsp.display-item.citation.isi??? 72
social impact