We have tested the use of atomic oxygen to prepare 3d oxide-metal interfaces for which standard reactive deposition techniques based on molecular oxygen fail in providing well-defined chemical composition and controlled atomic structure and morphology. Using monolayer NiO(001) on Ag(001) as a model system, we find that NiO(001)/Ag(001) films grown by atomic oxygen have a two-dimensional highly stoichiometric (1×1) structure and a uniform monoatomic thickness, while those grown by conventional O2 have a nonstoichiometric (2×1) structure or a three-dimensional morphology. Atomic oxygen may provide a practical way to prepare 3d oxide-metal interfaces with highly controlled stoichiometry, structure, and morphology. © 2009 The American Physical Society.
Growth of oxide-metal interfaces by atomic oxygen: Monolayer of NiO(001) on Ag(001) / Rota, A.; Altieri, S.; Valeri, S.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 79:16(2009), pp. 161401-1-161401-4. [10.1103/PhysRevB.79.161401]