Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e., related to interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (
Analysis of External and Internal Disorder to Understand Band‐Like Transport in n‐Type Organic Semiconductors / Stoeckel, Marc‐antoine; Olivier, Yoann; Gobbi, Marco; Dudenko, Dmytro; Lemaur, Vincent; Zbiri, Mohamed; Guilbert, Anne A. Y.; D'Avino, Gabriele; Liscio, Fabiola; Migliori, Andrea; Ortolani, Luca; Demitri, Nicola; Jin, Xin; Jeong, Young‐gyun; Liscio, Andrea; Nardi, Marco‐vittorio; Pasquali, Luca; Razzari, Luca; Beljonne, David; Samorì, Paolo; Orgiu, Emanuele. - In: ADVANCED MATERIALS. - ISSN 0935-9648. - 33:13(2021), pp. 1-10. [10.1002/adma.202007870]
Analysis of External and Internal Disorder to Understand Band‐Like Transport in n‐Type Organic Semiconductors
Pasquali, Luca;
2021
Abstract
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e., related to interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (
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