Surfaces of GaAs and InP(110) single crystals have been modified by ion bombardment at different energies. The modofications induced in the surface and subsurface regions have been investigated by different electron spectroscopies.
AES, EELS AND XPS STUDY OF ION-INDUCED GAAS AND INP(110) SURFACE AND SUBSURFACE MODIFICATIONS / Valeri, Sergio; Lolli, M.. - In: SURFACE AND INTERFACE ANALYSIS. - ISSN 0142-2421. - STAMPA. - 16:(1990), pp. 59-64.
AES, EELS AND XPS STUDY OF ION-INDUCED GAAS AND INP(110) SURFACE AND SUBSURFACE MODIFICATIONS
VALERI, Sergio;
1990
Abstract
Surfaces of GaAs and InP(110) single crystals have been modified by ion bombardment at different energies. The modofications induced in the surface and subsurface regions have been investigated by different electron spectroscopies.
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