HfO2-based resistive RAMs have been irradiated with high-LET heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. Reasons for the observed hardness are discussed.
Heavy-ion upset immunity of RRAM cells based on thin HfO2 layers / Alayan, M.; Bagatin, M.; Gerardin, S.; Paccagnella, A.; Vianello, E.; Nowak, E.; De Salvo, B.; Larcher, L.; Perniola, L.. - 2016-:(2017), pp. 1-5. (Intervento presentato al convegno 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016 tenutosi a deu nel 2016) [10.1109/RADECS.2016.8093174].
Heavy-ion upset immunity of RRAM cells based on thin HfO2 layers
Larcher L.;
2017
Abstract
HfO2-based resistive RAMs have been irradiated with high-LET heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. Reasons for the observed hardness are discussed.
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