HfO2-based resistive RAMs have been irradiated with high-LET heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. Reasons for the observed hardness are discussed.

Heavy-ion upset immunity of RRAM cells based on thin HfO2 layers / Alayan, M.; Bagatin, M.; Gerardin, S.; Paccagnella, A.; Vianello, E.; Nowak, E.; De Salvo, B.; Larcher, L.; Perniola, L.. - 2016-:(2017), pp. 1-5. ((Intervento presentato al convegno 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016 tenutosi a deu nel 2016 [10.1109/RADECS.2016.8093174].

Heavy-ion upset immunity of RRAM cells based on thin HfO2 layers

Larcher L.;
2017

Abstract

HfO2-based resistive RAMs have been irradiated with high-LET heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. Reasons for the observed hardness are discussed.
2016
16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016
deu
2016
2016-
1
5
Alayan, M.; Bagatin, M.; Gerardin, S.; Paccagnella, A.; Vianello, E.; Nowak, E.; De Salvo, B.; Larcher, L.; Perniola, L.
Heavy-ion upset immunity of RRAM cells based on thin HfO2 layers / Alayan, M.; Bagatin, M.; Gerardin, S.; Paccagnella, A.; Vianello, E.; Nowak, E.; De Salvo, B.; Larcher, L.; Perniola, L.. - 2016-:(2017), pp. 1-5. ((Intervento presentato al convegno 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016 tenutosi a deu nel 2016 [10.1109/RADECS.2016.8093174].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1222832
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