It has been recently found that different types of CaF2 nanostructures can be formed on Si[001] substrates depending on the growth conditions. Below 500°C, nearly square-shaped dots nucleate on bare Si[001] surface; above 650°C, at submonolayer coverage, a so-called "wetting layer" forms. At higher coverage, formation of CaF2 stripes of a few nanometers in height and width takes place on top of the wetting layer. Interestingly, CaF2 [001]∥Si[001] in the dots and CaF2 [110]∥Si[001] in the stripes. In this work, initial stages of CaF2 epitaxial growth on Si[001] were studied by atomic force microscopy and photoemission spectroscopy with emphasis on formation and chemical composition of the wetting layer.

Initial stages of CaF2 growth and wetting layer formation on Si[001] / Sokolov, N. S.; Suturin, S. M.; Ulin, V. P.; Pasquali, L.; Selvaggi, G.; Nannarone, S.. - (2002), pp. 325-326. (Intervento presentato al convegno 12th International Conference on Molecular Beam Epitaxy, MBE 2002 tenutosi a Renaissance Parc 55 Hotel, usa nel 2002) [10.1109/MBE.2002.1037891].

Initial stages of CaF2 growth and wetting layer formation on Si[001]

Pasquali L.;
2002-01-01

Abstract

It has been recently found that different types of CaF2 nanostructures can be formed on Si[001] substrates depending on the growth conditions. Below 500°C, nearly square-shaped dots nucleate on bare Si[001] surface; above 650°C, at submonolayer coverage, a so-called "wetting layer" forms. At higher coverage, formation of CaF2 stripes of a few nanometers in height and width takes place on top of the wetting layer. Interestingly, CaF2 [001]∥Si[001] in the dots and CaF2 [110]∥Si[001] in the stripes. In this work, initial stages of CaF2 epitaxial growth on Si[001] were studied by atomic force microscopy and photoemission spectroscopy with emphasis on formation and chemical composition of the wetting layer.
2002
12th International Conference on Molecular Beam Epitaxy, MBE 2002
Renaissance Parc 55 Hotel, usa
2002
325
326
Sokolov, N. S.; Suturin, S. M.; Ulin, V. P.; Pasquali, L.; Selvaggi, G.; Nannarone, S.
Initial stages of CaF2 growth and wetting layer formation on Si[001] / Sokolov, N. S.; Suturin, S. M.; Ulin, V. P.; Pasquali, L.; Selvaggi, G.; Nannarone, S.. - (2002), pp. 325-326. (Intervento presentato al convegno 12th International Conference on Molecular Beam Epitaxy, MBE 2002 tenutosi a Renaissance Parc 55 Hotel, usa nel 2002) [10.1109/MBE.2002.1037891].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1212453
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