Large built-in piezoelectric fields in nitride nanostructures, because of their wurtzite structure, induce a spatial seperation between confined electrons and holes and lead to formation of electric dipoles. This paper investigates the effects of exciton-exciton interaction as a dipolar interaction in a GaN/AlxGa1-xN microdisk. We show how this interaction result in biexciton binding energies in the meV energy range. Also we study the effect of disk radius on exciton binding energy. Results show that the exciton binding energy in smaller disks, is larger than the bigger one. © 2009 SPIE.
The role of exciton-exciton interaction on nonlinearities in GaN microdisks / Shojaei, S.; Troiani, F.; Asgari, A.; Kalafi, M.; Goldoni, G.. - 7354:(2009), p. 73541I. ( Nonlinear Optics and Applications III Prague, cze 2009) [10.1117/12.820538].
The role of exciton-exciton interaction on nonlinearities in GaN microdisks
Troiani F.;Goldoni G.
2009
Abstract
Large built-in piezoelectric fields in nitride nanostructures, because of their wurtzite structure, induce a spatial seperation between confined electrons and holes and lead to formation of electric dipoles. This paper investigates the effects of exciton-exciton interaction as a dipolar interaction in a GaN/AlxGa1-xN microdisk. We show how this interaction result in biexciton binding energies in the meV energy range. Also we study the effect of disk radius on exciton binding energy. Results show that the exciton binding energy in smaller disks, is larger than the bigger one. © 2009 SPIE.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
